SUD50N03-06P

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 84b 59b rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation APPLICATIONS D DC/DC Converters D Synchronous Rectifiers D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IS Symbol VDS VGS Limit 30 "20 84b 59b 100 25 88 8.3a - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 71844 S-31268—Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC Symbol Typical 15 40 1.4 Maximum 18 50 1.7 Unit _C/W 1 SUD50N03-06P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Curre...