SUD50N03-07

SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 20 14 100 20 136 5a −55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70767 S-40272—Rev. E, 23-Feb-04 www.vishay.com Symbol RthJA RthJC Typical Maximum 30 Unit _C/W 0.85 1.1 1 SUD50N03-07 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID =20...