SUD50N03-11

SUD50N03-11 New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.011 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 50 43 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-11 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 30 "20 50 37 Unit V A 100 50 62.5c 7.5b –55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71187 S-01329—Rev. B, 12-Jun-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec Steady State Symbol RthJA RthJC RthJL Typical 17 50 2 4 Maximum 20 60 2.4 4.8 Unit _C/W _C/W 1 SUD50N03-11 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V,...