P-Channel MOSFET
SUD50P04-13L
New Product
Vishay Siliconix
P-Channel 40-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
−40
D T...
Description
SUD50P04-13L
New Product
Vishay Siliconix
P-Channel 40-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
−40
D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A)
−60c −48
rDS(on) (W)
0.013 @ VGS = −10 V 0.022 @ VGS = −4.5 V
APPLICATIONS
D Automotive Such As: − High-Side Switch − Motor Drive − 12-V Boardnet
TO-252
S
G Drain Connected to Tab G D S D P-Channel MOSFET
Top View Order Number: SUD50P04-13L—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
Limit
−40 "20 −60c −43 −100 −60c −40 80 93.7b 3a −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case t v 10 sec. Steady State
Symbol
RthJA RthJC
Typical
15 40 1.3
Maximum
18 50 1.6
Unit
_C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See SOA curve for voltage derating. c. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 73009 S-41267—Rev. A, 05-Jul-04 www.vishay.com
1
SUD50P04-13L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Sour...
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