BSS84PW

Preliminary data BSS84PW SIPMOS ® Small-Signal-Transistor Features · P-Channel Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current · Enhancement mode VDS RDS(on) ID 3 -60 8 -0.15 V · Avalanche rated · Logic Level · dv/dt rated W A 2 1 VSO05561 Type BSS84PW Package SOT-323 Ordering Code Q67042-S4028 Marking YBs Pin 1 G PIN 2 S PIN 3 D Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -0.15 -0.6 2.61 0.03 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse I D = -0.15 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt mJ kV/µs I S = -0.15 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 0.3 -55...+150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2000-04-14 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - BSS84PW Unit max. 110 K/W RthJS RthJA - - - 420 350 Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage Symbol min. Values typ. -1.5 max. -2 µA -0.1 -10 -10 10.5 6.9 4.6...