BSS74R

LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME BSS74R HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Device Dissipation Total Device Dissipation TAMB = 25°C Derate above 25°C TC = 25°C Derate above 25°C Operating Junction & Storage Temperature Range Thermal Resistance, Junction – Case 200V 200V 5V 0.5A 0.5W 2.86mW/°C 2.5W 14.3mW/°C -65 to 200°C 70°C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 12.7 (0.500) min. Prelim. 9/95 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage IC = 10mA IB = 0 Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current IC = 100mA IE = 100mA VCB = 150V VCE = 150V VBE = 5V VCE = 1V hFE DC Current Gain VCE = 10V VCE = 10V VCE = 10V VCE(sat) VBE(sat) Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = 10mA IC = 30mA IC = 10mA IC = 30mA IC = 20mA f = 20MHz I...