BSS192

DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interrupter in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package. 1 Bottom view Marking code: KB 2 3 MAM354 BSS192 PINNING - SOT89 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage d g s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance ID = −100 mA; VGS = −10 V ID = −1 mA; VGS = VDS CONDITIONS MAX. −240 −2.8 −150 20 V V mA Ω UNIT 1997 Jun 20 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Tamb ≤ 25 °C; note 1 open drain CONDITIONS − − − − − −65 − MIN. ...