BSS209PW

Preliminary data BSS 209PW OptiMOS-P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Product Summary VDS RDS(on) ID 3 -20 550 -0.58 SOT-323 V mΩ A 2 1 VSO05561 Drain pin 3 Type BSS 209PW Package SOT-323 Ordering Code Q67042-S4074 Marking X3s Gate pin1 Source pin 2 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.58 -0.46 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -2.3 3.5 -6 ±12 0.52 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-0.58 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.58A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-05 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSS 209PW Symbol min. RthJS RthJA - Values typ. max. 120 240 160 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID...