BSS135

SIPMOS® Small-Signal Transistor BSS 135 q q q q q q q VDS 600 V ID 0.080 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) 1 2 3 Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 G 2 D 3 S SS135 Package TO-92 BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 42 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 600 600 ± 14 ± 20 0.080 0.24 1.0 – 55 … + 150 ≤ 125 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 04.97 BSS 135 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.01 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 0.01 A Input capacitance VGS = − 3 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = − 3...