BSS119

Rev. 1.0 BSS119 SIPMOS Small-Signal-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS119 Package SOT23 Ordering Code Q67000-S007 Tape and Reel Information E6327: 3000 pcs/reel Marking sSH Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.17 0.13 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot 0.68 6 ±20 0.36 -55... +150 55/150/56 kV/µs V W °C Reverse diode d v/dt IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2002-12-10 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS119 Symbol min. RthJS - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS Values typ. 1.8 max. 2.3 Unit 100 1.3 V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C µA 0.05 0.5 10 4.9 3.4 0.1 5 100 10 6 nA Ω Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resist...