Document
E2L0015-17-Y1 ¡ Semiconductor
¡ Semiconductor MSM518122
131,072-Word ¥ 8-Bit Multiport DRAM
This version: Jan. 1998 MSM518122 Previous version: Dec. 1996
DESCRIPTION
The MSM518122 is an 1-Mbit CMOS multiport DRAM composed of a 131,072-word by 8-bit dynamic RAM and a 256-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. The MSM518122 supports three types of operation : random access to RAM port, high speed serial access to SAM port and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM518122 features the block write and flash write functions on the RAM port and a split data transfer capability on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V ± 10% • Full TTL compatibility • Multiport organization RAM: 128K word ¥ 8 bits SAM: 256 word ¥ 8 bits • Fast page mode • Write per bit • Masked flash write • Masked block write • RAS only refresh • CAS before RAS refresh • Hidden refresh • Serial read/write • 256 tap location • Bidirectional data transfer • Split transfer • Masked write transfer • Refresh: 512 cycles/8 ms • Package options: 40-pin 475 mil plastic ZIP (ZIP40-P-475-1.27) 40-pin 400 mil plastic SOJ (SOJ40-P-400-1.27)
(Product : MSM518122-xxZS) (Product : MSM518122-xxJS) xx indicates speed rank.
PRODUCT FAMILY
Family MSM518122-70 MSM518122-80 MSM518122-10 Access Time RAM 70 ns 80 ns 100 ns SAM 25 ns 25 ns 25 ns Cycle Time RAM 140 ns 150 ns 180 ns SAM 30 ns 30 ns 30 ns Power Dissipation Operating 120 mA 110 mA 100 mA Standby 8 mA 8 mA 8 mA
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¡ Semiconductor
MSM518122
PIN CONFIGURATION (TOP VIEW)
W5/IO5 W7/IO7 SE SIO6 SIO8
1 3 5 7 9
SC 1 2 4 6 8 W6/IO6 W8/IO8 SIO5 SIO7 SIO1 2 SIO2 3 SIO3 4 SIO4 5 DT/OE 6 W1/IO1 7 W2/IO2 8 W3/IO3 9 W4/IO4 10 VCC1 11 WB/WE 12 NC 13 RAS 14 NC 15 A8 16 A6 17 A5 18 A4 19 VCC2 20
SC 11 SIO2 13 SIO4 15 W1/IO1 17 W3/IO3 19 W4/IO4 21 WB/WE 23 A8 25 VSS2 27 A5 29 NC 31 A7 33 A2 35 A0 37 CAS 39
10 VSS1 12 SIO1 14 SIO3 16 DT/OE 18 W2/IO2 20 NC 22 VCC1 24 RAS 26 A6 28 NC 30 A4 32 VCC2 34 A3 36 A1 38 QSF 40 DSF
40-Pin Plastic SOJ
40 VSS1 39 SIO8 38 SIO7 37 SIO6 36 SIO5 35 SE 34 W8/IO8 33 W7/IO7 32 W6/IO6 31 W5/IO5 30 VSS2 29 DSF 28 NC 27 CAS 26 QSF 25 A0 24 A1 23 A2 22 A3 21 A7
40-Pin Plastic ZIP
Pin Name A0 - A8 W1/IO1 - W8/IO8 SIO1 - SIO8 RAS CAS WB/WE DT/OE
Function Address Input RAM Inputs/Outputs SAM Inputs/Outputs Row Address Strobe Column Address Strobe Write per Bit/Write Enable Transfer/Output Enable
Pin Name SC SE DSF QSF VCC VSS NC
Function Serial Clock SAM Port Enable Special Function Input Special Function Output Power Supply (5 V) Ground (0 V) No Connection
Note :
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
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¡ Semiconductor
BLOCK DIAGRAM
Column Address Buffer
Column Decoder Sense Amp.
Block Write Control I/O Control
Column Mask Register Color Register Mask Register RAM Input Buffer W1/IO1 - W8/IO8 RAM Output Buffer
Row Decoder
Row Address Buffer A0 - A8 Refresh Counter
512 ¥ 256 ¥ 8 RAM ARRAY
Flash Write Control SAM Input Buffer SAM Output Buffer
Gate SAM
Gate SAM
SIO1 - SIO8 Timing Generator
RAS CAS DT/OE WB/WE DSF SC SE VCC VSS
Serial Decoder SAM Address Buffer SAM Address Counter
QSF
MSM518122
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MSM518122
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Input Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD Topr Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C — — Rating –1.0 to 7.0 50 1 0 to 70 –55 to 150 (Note: 16) Unit V mA W °C °C
Recommended Operating Condition
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min. 4.5 2.4 –1.0 Typ. 5.0 — —
(Ta = 0°C to 70°C) (Note: 17) Max. 5.5 6.5 0.8 Unit V V V
Capacitance
Parameter Input Capacitance Input/Output Capacitance Output Capacitance Symbol CI CI/O CO(QSF) Min. — — —
(VCC = 5 V ±10%, f = 1 MHz, Ta = 25°C) Max. 7 9 9 Unit pF pF pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter Output "H" Level Voltage Output "L" Level Voltage Input Leakage Current Symbol VOH VOL ILI Condition IOH = –2 mA IOL = 2 mA 0 £ VIN £ VCC All other pins not under test = 0 V Output Leakage Current ILO 0 £ VOUT £ 5.5 V Output Disable –10 10 –10 10 mA Min. 2.4 — Max. — 0.4 Unit V
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¡ Semiconductor DC Characteristics 2
Item (RAM) Operating Current (RAS, CAS Cycling, tRC = tRC min.) Standby Current (RAS, CAS = VIH) RAS Only Refresh Current (RAS Cycling, CAS = VIH, tRC = tRC min.) Page Mode Current (RAS = VIL, CAS Cycling, tPC = tPC min.) CAS before RAS Refresh Current (RAS Cycling, CAS before RAS, tRC = tRC min.) Data Transfer Current (RAS, CAS Cycling, tRC = tRC min.) Flash Write Current (RAS, CAS Cycling, tR.