Document
RB531XN
Diodes
Schottky barrier diode
RB531XN
!Applications Rectifying small power !External dimensions (Unit : mm)
2.0±0.2 1.3±0.1 0.65 0.65
0.9±0.1 0.7 0.1Min.
1.25±0.1 2.1±0.1
(4)
(5)
!Construction Silicon epitaxial planar
ROHM : UMD6 EIAJ : SOT-363 JEDEC :
!Absolute maximum ratings (Ta=25°C)
Parameter
DC reverse voltage Mean rectifying current ∗1 Peak forward surge curren ∗2 Junction temperature Storage temperature
∗1 Rating of per diode. ∗2 60Hz for 1
Symbol VR IO IFSM Tj Tstg
Limits 30 100 1 125 −40 to +125
Unit V mA A °C °C
!Electrical characteristics (Ta=25°C)
Parameter
Forward voltage Reverse current
Symbol VF1 VF2 IR
Min. − − −
Typ. − − −
Max. 0.300 0.430 20
Unit V V µA IF=10mA IF=100mA VR=10V
Note) Please pay attention to static electricity when handling.
3K
(6)
!Features 1) Small mold type. (UMD6) 2) High reliability.
K K K (3) (2) (1)
(3)
(2)
(1)
0∼0.1
(4) (5) (6) A A A
0.2
+0.1 −0.05
0.15±0.05
Conditions
1/2
RB531XN
Diodes
!Electrical characteristic curves (Ta=25°C)
1
10m 1m
REVERSE CURRENT : IR (A)
100
FORWARD CURRENT : IF (A)
100m 10m 1m 100µ 10µ 1µ 0
125°C 75°C
12 5° 75 C °C 25 °C
100µ 10µ 1µ 100n
TERMINAL CAPACITANCE : CT (pF)
−2
5°C
25°C
10
−25°C
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Capacitance between terminals characteristics
2/2
.