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GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWIT...
www.DataSheet.co.kr
GT10J303
TOSHIBA INSULATED GATE BIPOLAR
TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (IC = 10A) Unit: mm
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 10 20 10 20 30 150 −55~150 UNIT V V A A A A W °C °C
JEDEC JEITA TOSHIBA Weight:
⎯ ⎯ 2-10R1C g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
10J303
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free pa...