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10J303

Toshiba
Part Number 10J303
Manufacturer Toshiba
Description GT10J303
Published Sep 2, 2005
Detailed Description www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWIT...
Datasheet PDF File 10J303 PDF File

10J303
10J303

Overview
www.
DataSheet.
co.
kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS z Third-generation IGBT z Enhancement mode type z High speed z Low saturation voltage : tf = 0.
30μs (Max.
) (IC = 10A) : VCE (sat) = 2.
7V (Max.
) (IC = 10A) Unit: mm z FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Forward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 10 20 10 20 30...


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