N-CHANNEL Power MOSFET
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP6NC90Z STP6NC90ZFP STB6...
Description
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1
s s
STP6NC90Z - STP6NC90ZFP STB6NC90Z - STB6NC90Z-1
VDSS 900 V 900 V 900 V 900 V
RDS(on) < 1.9 < 1.9 < 1.9 < 1.9 Ω Ω Ω Ω
ID 5.4 5.4 5.4 5.4 A A A A
3 1
s s
TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE
D²PAK
1
3 2
TO-220
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj July 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature --
I²PAK (Tabless TO-220)
Value STP...
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