STP6NC80Z

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC80Z/FP www.DataSheet4U.com STB6NC80Z/-1 s s VDSS 800V 800V RDS(on) < 1.8 Ω < 1.8 Ω ID 5.4 A 5.4 A 1 3 s s s TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (q ) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature .(*)Pulse Value STP(B)6NC80Z(-1) 8...