EN29F002

EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES 5.0V ± 10% for both read/write operation Read Access Time - 45ns, 55ns, 70ns, and 90ns Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors Boot Block Top/Bottom Programming Architecture High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical JEDEC standard DATA polling and toggle bits feature Hardware RESET Pin (n/a for EN29F002N) Single Sector and Chip Erase Sector Protection / Temporary Sector Unprotect ( RESET = VID) Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another sector during Erase Suspend Mode 0.4 µm double-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 3.2V 100K endurance cycle Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type 1) Commercial and Industrial Temperature Ranges Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current Low Power Active Current - 30mA active read current - 30mA program / erase current JEDEC Standard program and erase commands GENERAL DESCRIPTION The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized in...