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EN29F002 Dataheets PDF



Part Number EN29F002
Manufacturers ETC
Logo ETC
Description 2 Megabit (256K x 8-bit) Flash Memory
Datasheet EN29F002 DatasheetEN29F002 Datasheet (PDF)

EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs t.

  EN29F002   EN29F002



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EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical • JEDEC standard DATA polling and toggle bits feature • Hardware RESET Pin (n/a for EN29F002N) • Single Sector and Chip Erase • Sector Protection / Temporary Sector Unprotect ( RESET = VID) • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read and program another sector during Erase Suspend Mode • 0.4 µm double-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 3.2V • 100K endurance cycle • Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type 1) • Commercial and Industrial Temperature Ranges • Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current • Low Power Active Current - 30mA active read current - 30mA program / erase current • JEDEC Standard program and erase commands GENERAL DESCRIPTION The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002 / EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29F002 / EN29F002N has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( W E ) controls which eliminate bus contention issues. This device is designed to allow either single sector or full chip erase operation, where each sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each sector. 4800 Great America Parkway, Suite 202 1 Santa Clara, CA 95054 Rev. C, Issue Date: 2001/07/05 Tel: 408-235-8680 Fax: 408-235-8685 EN29F002 / EN29F002N TABLE 1. PIN DESCRIPTION Pin Name A0-A17 DQ0-DQ7 Function Addresses Data Input/Outputs Chip Enable Output Enable Write Enable Hardware Reset Sector Unprotect Supply Voltage (5V ± 10% ) Ground CE OE WE RESET NC on EN29F002N FIGURE 1. LOGIC DIAGRAM Vcc 18 A0 - A17 EN29F002T/B 8 DQ0 - DQ7 CE OE WE RESET (n/a for EN29F002N) Vcc Vss Vss TABLE 2. BLOCK ARCHITECTURE TOP BOOT BLOCK SECTOR 6 5 4 3 2 1 0 BOTTOM BOOT BLOCK A.


EN29F002A EN29F002 STP6NC80Z


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