STC945

Semiconductor STC945 NPN Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with STA733 Ordering Information Type NO. STC945 Marking STC945 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 PIN Connections 1. Emitter 2. Collector 3. Base 0.38 KST-9075-000 1 STC945 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 40 5 150 625 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ Min. Typ. Max. 50 40 5 70 80 2 0.1 0.1 700 0.25 3.5 10 Unit V V V µA µA V MHz pF dB * : hFE rank / O : 70 ~...