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2SC5809 Dataheets PDF



Part Number 2SC5809
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC5809 Datasheet2SC5809 Datasheet (PDF)

Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching ■ Features • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 ■ Absol.

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Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching ■ Features • High-speed switching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturation voltage VCE(sat) • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 −55 to +150 °C °C Unit V V V A A W 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 10 mA, IB = 0 VCB = 800 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.6 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 3.0 A, Resistance loaded IB1 = 0.6 A, IB2 = − 0.6 A VCC = 200 V 15 8 0.3 8 1.1 2.0 0.3 0.6 V MHz µs µs µs Min 500 100 100 Typ Max Unit V µA µA  Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2002 SJD00291AED 1 2SC5809 PC  Ta 35 (1) 30 25 20 15 (2) 10 5 (3) 0 0 20 40 60 80 100 120 140 160 (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink Safe operation area 100 Non repetitive pulse TC = 25°C Collector power dissipation PC (W) Collector current IC (A) 10 I CP IC t=1s 1 t = 1 ms t = 10 ms 0.1 0.01 1 10 100 1 000 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Rth  t 1 000 Ta = 25°C Thermal resistance Rth (°C/W) 100 (1) 10 (2) 1 0.1 0.001 (1) Without heat sink (2) With a Al heat sink 10 × 10 × 2 mm 0.01 0.1 1 10 100 1 000 Time t (s) 2 SJD00291AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circu.


IRLZ14 2SC5809 STC945


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