Power MOSFET
PD - 9.903A
IRLZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRLZ14S) Low-profile t...
Description
PD - 9.903A
IRLZ14S/L
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175°C Operating Temperature Fast Switching
D
VDSS = 60V RDS(on) = 0.20Ω
G S
ID = 10A
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ14L) is available for lowprofile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and S...
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