Document
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by MPS6520/D
COLLECTOR 3 2 BASE
NPN MPS6520 * MPS6521
1 EMITTER
PNP MPS6523
Voltage and current are negative for PNP transistors
*Motorola Preferred Device
COLLECTOR 3 2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating Collector – Emitter Voltage MPS6520, MPS6521 MPS6523 Collector – Base Voltage MPS6520, MPS6521 MPS6523 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO 25 — VCBO 40 — VEBO IC PD PD TJ, Tstg 4.0 100 625 5.0 1.5 12 – 55 to +150 — 25 Vdc mAdc mW mW/°C Watts mW/°C °C — 25 Vdc
1 2 3
NPN
PNP
Unit Vdc
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6520, MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO — — 0.05 0.05 25 4.0 — — Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
NPN MPS6520 MPS6521 PNP MPS6523
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) hFE MPS6520 MPS6521 MPS6520 MPS6521 MPS6523 MPS6523 VCE(sat) 100 150 200 300 150 300 — — — 400 600 — 600 0.5 Vdc —
(IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k Ω, Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF — — 3.5 3.0 pF dB
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN MPS6520 MPS6521 PNP MPS6523
NPN MPS6520, MPS6521
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 275
10 < t1 < 500 µs DUTY CYCLE = 2% 0
+ 3.0 V t1 +10.9 V 10 k 275
CS < 4.0 pF*
– 9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100.