MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS6507/D
Amplifier Transistor
NPN Silicon
2 BASE
COLLE...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS6507/D
Amplifier
Transistor
NPN Silicon
2 BASE
COLLECTOR 3
MPS6507
1 EMITTER
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 50 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — 50 1.0 nAdc mAdc 20 30 3.0 — — — — — — Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE 25 75 — —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) ...