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STP8NM50

ST Microelectronics

N - CHANNEL POWER MOSFET

STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type ...


ST Microelectronics

STP8NM50

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Description
STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STP8NM50 t(s)STP8NM50FP 550V 550V <0.8Ω <0.8Ω 8A 8A (1) c1. Limited only by maximum temperature allowed du■ 100% avalanche tested ro■ High dv/dt and avalanche capabilities P■ Low gate input resistance te■ Low input capacitance and gate charge soleDescription bThe MDmesh™ is a new revolutionary Power - OMOSFET technology that associates the multiple )drain process with the company’s PowerMESH™ t(shorizontal layout. The resulting product has an outstanding low on-resistance, impressively high ucdv/dt and excellent avalanche characteristics. The dadoption of the company’s proprietary strip rotechnique yields overall dynamic performance Pthat is significantly better than that of similar competition’s products. leteApplications Obso■ Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number STP8NM50 STP8NM50FP Marking P8NM50 P8NM50FP Package TO-220 TO-220FP Packaging Tube Tube October 2006 Rev 7 1/14 www.st.com 14 Contents Contents STP8NM50 - STP8NM50FP 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 T...




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