STP80NF75L

STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE STP80NF75L STB80NF75L STB80NF75L-1 s s s s VDSS 75 V 75 V 75 V RDS(on) <0.01 Ω <0.01 Ω <0.01 Ω ID 80 A 80 A 80 A 3 1 3 12 TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE D2PAK TO-263 I2PAK TO-262 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM() Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 16 80 80 320 300 2 12 930 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C EAS (2) Tstg Tj ()Current Limited by Package () Pulse width limited by safe opera...