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STW16NA40 STH16NA40FI
N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
PRELIMINARY DATA TYPE STW16NA40 STH16NA40FI
s s s s s
V DSS 400 V 400V
R DS(on) < 0.3 Ω < 0.3 Ω
ID 16 A 10 A
TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-247
3 2 1
3 2 1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT
s
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STW16NA40 VDS V DGR V GS ID ID IDM ( • ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH16NA40FI 400 400 V V V 10 7 64 70 0.56 4000 A A A W W/ o C V
o o
± 30 16 10 64 180 1.44 -65 to 150 150
C C
(•) Pulse width limited by safe operating area
October 1998
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STW16NA40-STH16NA40FI
THERMAL DATA
TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.69 30 0.1 300 ISOWATT218 1.78
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IAR E AS E AR IAR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 16 435 23 10 Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µ A V GS = 0 T c = 100 o C Min. 400 25 250 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 30 V
ON (∗)
Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current V DS = V GS Test Conditions I D = 250 µ A T c = 100 o C 16 Min. 2.25 Typ. 3 0.21 Max. 3.75 0.3 0.6 Unit V Ω Ω A
V GS = 10V I D = 8 A V GS = 10V ID = 8 A V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max ID = 8 A Min. 9 Typ. 12 2600 390 120 3500 540 160 Max. Unit S pF pF pF
V DS = 25 V
f = 1 MHz
V GS = 0
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STW16NA40-ST.