STD100NH03L

N-CHANNEL 30V - 0.005 Ω - 60A DPAK STripFET™ III POWER MOSFET TYPE STD100NH03L s s s s s s STD100NH03L VDSS 30 V RDS(on) < 0.0055 Ω ID 60 A(2) TYPICAL RDS(on) = 0.005 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 1 DPAK TO-252 (Suffix “T4”) DESCRIPTION The STD100NH03L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STD100NH03LT4 MARKING D100NH03L PACKAGE TO-252 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 60 60 240 100 0.66 700 -55 to 175 Unit V V V A A A W W/°C mJ °C 1/11 September 2003 STD100NH03L THERMAL DATA Rthj-case Rthj-amb Rthj-pcb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Jun...