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TA4002F

Toshiba Semiconductor

VHF - UHF WIDE BAND AMPLIFIER

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4002F VHF~UHF Wide Band Amplifier Features z Band width: ...


Toshiba Semiconductor

TA4002F

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TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4002F VHF~UHF Wide Band Amplifier Features z Band width: 1.3 GHz (typ.) (3dB down) z High gain: |S21|2 = 23dB (typ.) (f = 500 MHz) z 50 Ω Input and output impedance z Small package Pin Assignment (top view) Marking TA4002F Weight: 0.013 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage Total power dissipation Operating temperature Storage temperature VCC PD (Note 1) Topr Tstg 6 300 −40~85 −55~125 V mW °C °C Note: Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). When mounted glass epoxy of 2.5 cm2 × 1.6 t 1 2007-11-01 TA4002F Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Circuit current Insertion gain ICC |S21|2 ― VCC = 5 V, non carrier 1 VCC = 5 V, f = 500 MHz 10 14 20 mA 20 23 26 dB Band width BW 1 VCC = 5 V (Note ...




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