DatasheetsPDF.com

TA4012FU

Toshiba Semiconductor

UHF WIDE-BAND AMPLIFIER

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Fe...


Toshiba Semiconductor

TA4012FU

File Download Download TA4012FU Datasheet


Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5 to 2.2 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C) Weight: 0.006 g (typ.) Characteristic Symbol Rating Unit Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature VCC1 2.2 V VCC2 (Note 1) 3 V PD (Note 2) 300 mW Topr −40 to 85 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: When VCC is operated at less than 1/4 duty cycle. Note 2: When mounted on the glass epoxy of 2.5 cm2 × 1.6 t Caution This device electrostatic sensitivity. Please handle with caution. Start of commercial production 1999-03 1 2014-03-01 TA4012FU Electrical Characteristics (Ta = 25°C, Zg = ZI = 50 Ω) Chara...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)