DatasheetsPDF.com

TA4103F

Toshiba Semiconductor

1.9GHz BAND UP CONVERTER APPLICATION

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features l Bu...


Toshiba Semiconductor

TA4103F

File Download Download TA4103F Datasheet


Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4103F 1.9 GHz Band Up Converter Application Features l Built in Lo and IF buffer amplifiers. l Double balanced MIX circuit l High conversion gain: GC = 3dB (typ.) l Recommended operating voltage: VCC = 2.7~3.3 V Pin Assignment (top view) Marking TA4103F Weight: 0.02 g (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Supply voltage VCC 5V Total power dissipation PD (Note1) 300 mW Operating temperature Topr −40~85 °C Storage temperature range Tstg −55~125 °C Note 1: When mounted on the glass epoxy board of 2.5 cm2 × 1.6 t 000707EBA1 · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA S...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)