Document
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 17 KF6 B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tp = 1 ms TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1700 1200 2400 2400 V A A A
TC=25°C, Transistor
Ptot
9,6
kW
VGES
+/- 20V
V
IF
1200
A
IFRM
2400
A
VR = 0V, t p = 10ms, T Vj = 125°C
2 I t
440
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, V GE = 15V, Tvj = 25°C IC = 1200A, V GE = 15V, Tvj = 125°C IC = 80mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 VCE sat
min.
typ.
2,6 3,1 5,5
max.
3,1 3,6 6,5 V V V
VGE = -15V ... +15V
QG
14,5
µC
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
79
nF
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25°C VCE = 1700V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj = 25°C
Cres ICES
4 0,03 16 2,5 120 400
nF mA mA nA
IGES
prepared by: Oliver Schilling approved by: Chr. Lübke; 08.10.99
date of publication: 4.9.1998 revision: 2 (serie)
1(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 17 KF6 B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2 Ω, Tvj = 125°C, LS = 50nH IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2 Ω, Tvj = 125°C, LS = 50nH tP ≤ 10µsec, V GE ≤ 15V TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 4800 12 A nH Eoff 480 mWs Eon 330 mWs tf 0,13 0,14 µs µs td,off 1,1 1,1 µs µs tr 0,16 0,16 µs µs td,on 0,3 0,3 µs µs
min.
typ.
max.
RCC´+EE´
0,08
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1200A, V GE = 0V, Tvj = 25°C IF = 1200A, V GE = 0V, Tvj = 125°C IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Erec 90 180 mWs mWs Qr 160 350 µAs µAs IRM 700 1000 A A VF
min.
typ.
2,1 1,95
max.
2,5 2,3 V V
2(8)
FZ1200R17KF6B2
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 1200 R 17 KF6 B2
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module λPaste = 1 W/m*K / λgrease = 1 W/m*K RthCK 0,008 RthJC
typ.
max.
0,013 0,025 K/W K/W K/W
Tvj
150
°C
Top
-40
125
°C
Tstg
-40
125
°C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tra.