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FZ1200R17KF6B2 Dataheets PDF



Part Number FZ1200R17KF6B2
Manufacturers Eupec
Logo Eupec
Description IGBT
Datasheet FZ1200R17KF6B2 DatasheetFZ1200R17KF6B2 Datasheet (PDF)

Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward curre.

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Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tp = 1 ms TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1700 1200 2400 2400 V A A A TC=25°C, Transistor Ptot 9,6 kW VGES +/- 20V V IF 1200 A IFRM 2400 A VR = 0V, t p = 10ms, T Vj = 125°C 2 I t 440 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 4 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, V GE = 15V, Tvj = 25°C IC = 1200A, V GE = 15V, Tvj = 125°C IC = 80mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 VCE sat min. typ. 2,6 3,1 5,5 max. 3,1 3,6 6,5 V V V VGE = -15V ... +15V QG 14,5 µC f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies 79 nF f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1700V, V GE = 0V, Tvj = 25°C VCE = 1700V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj = 25°C Cres ICES 4 0,03 16 2,5 120 400 nF mA mA nA IGES prepared by: Oliver Schilling approved by: Chr. Lübke; 08.10.99 date of publication: 4.9.1998 revision: 2 (serie) 1(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 1200A, V CE = 900V VGE = ±15V, RG = 1,2 Ω, Tvj = 25°C VGE = ±15V, RG = 1,2 Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip pro Zweig / per arm IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2 Ω, Tvj = 125°C, LS = 50nH IC = 1200A, V CE = 900V, V GE = 15V RG = 1,2 Ω, Tvj = 125°C, LS = 50nH tP ≤ 10µsec, V GE ≤ 15V TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 4800 12 A nH Eoff 480 mWs Eon 330 mWs tf 0,13 0,14 µs µs td,off 1,1 1,1 µs µs tr 0,16 0,16 µs µs td,on 0,3 0,3 µs µs min. typ. max. RCC´+EE´ 0,08 mΩ Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1200A, V GE = 0V, Tvj = 25°C IF = 1200A, V GE = 0V, Tvj = 125°C IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Sperrverzögerungsladung recovered charge IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200A, - diF/dt = 7200A/µsec VR = 900V, VGE = -10V, T vj = 25°C VR = 900V, VGE = -10V, T vj = 125°C Erec 90 180 mWs mWs Qr 160 350 µAs µAs IRM 700 1000 A A VF min. typ. 2,1 1,95 max. 2,5 2,3 V V 2(8) FZ1200R17KF6B2 Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 17 KF6 B2 Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module λPaste = 1 W/m*K / λgrease = 1 W/m*K RthCK 0,008 RthJC typ. max. 0,013 0,025 K/W K/W K/W Tvj 150 °C Top -40 125 °C Tstg -40 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tra.


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