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MPS8099 Dataheets PDF



Part Number MPS8099
Manufacturers Motorola
Logo Motorola
Description Amplifier Transistors
Datasheet MPS8099 DatasheetMPS8099 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS8098/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C .

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS8098/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.0 500 625 5.0 1.5 12 – 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.0 Vdc mAdc mW mW/°C 1 Unit Vdc Vdc Watts mW/°C °C 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS8098, MPS8598 MPS8099, MPS8599 IEBO MPS8098, MPS8099 MPS8598, MPS8599 — — 0.1 0.1 V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 ICES ICBO — — 0.1 0.1 µAdc 6.0 5.0 — — — 0.1 µAdc µAdc 60 80 — — Vdc 60 80 — — Vdc Vdc v 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) MPS8098, MPS8598 MPS8099, MPS8599 hFE 100 100 75 VCE(sat) — — VBE(on) 0.5 0.6 0.7 0.8 0.4 0.3 Vdc 300 — — Vdc — SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPS8098, MPS8099 MPS8598, MPS8599 Cibo MPS8098, MPS8099 MPS8598, MPS8599 — — 25 30 fT Cobo — — 6.0 8.0 pF 150 — MHz pF v 300 ms, Duty Cycle = 2.0%. TURN–ON TIME –1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin TURN–OFF TIME +VBB VCC +40 V RL OUTPUT RB 5.0 mF 100 * CS 100 t 6.0 pF t 6.0 pF Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 NPN f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 300 TJ = 25°C 200 5.0 V VCE = 1.0 V 100 70 50 f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 300 TJ = 25°C 200 –5.0 V VCE = –1.0 V 100 70 50 PNP 30 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 30 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 IC, COLLECTOR CURRENT (mA) Figure 2. MPS8098/99 Current–Gain — Bandwidth Product Figure 3. MPS8598/99 Current–Gain — Bandwidth Product 40 TJ = 25°C 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Cibo 10 8.0 6.0 4.0 Cobo 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 40 25 C TT °° C JJ==25 20 Cibo 10 8.0 6.0 Cobo 4.0 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 4. MPS8098/99 Capacitance Figure 5. MPS8598/99 Capacitance 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 ts VCC = –40 V IC/IB = 10 IB1 = IB2 TJ = 25°C tf tf tr td @ VBE(off) = 0.5 V 10 10 20 30 50 70 100 tr 200 20 10 td @ VBE(off) = –0.5 V –10 –20 –30 –50 –70 –100 –200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. MPS8098/99 Switching Times Figure 7. MPS8598/99 Switching Times Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 NPN MPS8098 MPS8099 PNP MPS8598 MPS8599 NPN 1.0 k 700 500 300 200 100 70 50 30 20 DUTY CYCLE ≤ 10% 10 1.0 2.0 3.0 5.0 7.0 10 –1.0 k –700 –500 –300 –200 –100 –70 –50 –30 –20 –10 50 70 100 –1.0 PNP I C , COLLECTOR CURRENT (mA) .


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