MPS8550S

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8050S. L MPS8550S EPITAXIAL PLANAR PNP TRANSISTOR E B L 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING -40 -25 -6 -1.5 350 150 -55 150 0.6 ) UNIT V 1 P P N C V V A mW DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M 1. EMITTER 2. BASE 3. COLLECTOR * PC : Package Mounted On 99.5% Alumina (10 8 K SOT-23 Marking h FE Rank Lot No. Type Name BJ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ) SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) TEST CONDITION VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100 A, IE=0 IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz, IE=0 300 MIN. -40 -25 45 85 40 100 TYP. 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 V V V MHz pF UNIT nA nA V V DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Volta...