MPS8598

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS8098/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS8098 MPS8099* PNP MPS8598 MPS8599* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.0 500 625 5.0 1.5 12 – 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.0 Vdc mAdc mW mW/°C 1 Unit Vdc Vdc Watts mW/°C °C 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS809...