STS12NH3LL

STS12NH3LL N-CHANNEL 30 V - 0.008 Ω - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STS12NH3LL s s s s s Figure 1: Package RDS(on) < 0.0105 Ω ID 12 A VDSS 30 V TYPICAL RDS(on) = 0.008 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5 V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE LOW INPUT CAPACITANCE SO-8 DESCRIPTION The STS12NH3LL is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It’s therefore ideal for high-density converters in Telecom and Computer applications. Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH FREQUENCY DC-DC CONVERTERS FOR COMPUTER AND TELECOM Table 2: Order Codes Part Number STS12NH3LL Marking S12NH3LL Package SO-8 Packaging TAPE & REEL Rev. 3 July 2004 This is preliminary information on a new product now in development. Details are subject to change without notice 1/7 STS12NH3LL Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) Ptot Tstg Tj Parameter Drain-source Voltage (VGS= 0) Drain-gate Voltage (RGS= 20 kΩ) Gate-source Voltage Drain Current (continuous) at TC= 25°C Drain Current (continuous) at TC= 100°C Drain Current (pulsed) Total Dissipation at TC= 25°C Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 12 7.5 48 2.5 – 55 to 150 Unit V V V A A ...