STS1HNC60

N-CHANNEL 600V - 7Ω - 0.4A SO-8 PowerMesh™II MOSFET PRELIMINARY DATA TYPE STS1HNC60 s s s s s STS1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.36 A TYPICAL RDS(on) = 7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8 DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCH MODE LOW POWER SUPPIES (SMPS) s CFL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ± 30 0.36 0.22 1.44 2.5 0.028 3.5 –65 to 150 150 (1)ISD ≤ 0.36 A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area July 2001 1/6 STS1HNC60 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resist...