N-CHANNEL PowerMESH MOSFET
N-CHANNEL 600V - 12Ω - 0.3A - SO-8 PowerMESH™II MOSFET
TYPE STS1NC60
s s s s s
STS1NC60
VDSS 600 V
RDS(on) < 15 Ω
ID...
Description
N-CHANNEL 600V - 12Ω - 0.3A - SO-8 PowerMESH™II MOSFET
TYPE STS1NC60
s s s s s
STS1NC60
VDSS 600 V
RDS(on) < 15 Ω
ID 0.3 A
TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SO-8
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS)
s
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt (1) Tstg Tj
.
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 600 600 ±30 0.3 0.18 1.2 2.5 0.02 3 –60 to 150 150
(1)ISD ≤ 0.3A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX
Unit V V V A A A W W/°C V/ns °C °C
()Pulse width limited by safe operating area
July 2001
1/8
STS1NC60
THERMAL DATA
Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose 50 60 260 °C/W °C/W °C
AVALANC...
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