STB12NM50-1

STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STP12NM50/FP 500V <0.35Ω 12 A STB12NM50-1 500V <0.35Ω 12 A s TYPICAL RDS(on) = 0.3Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. TO-220 3 2 1 TO-220FP 123 I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)12NM50(-1) STP12NM50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 12 12(*) A ID Drain Current (continuos) at TC = 100°C 7.5 7.5(*) A IDM (q) Drain Current (pulsed) 48 48(*) A PTOT Total Dissipati...