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MPSA56 Dataheets PDF



Part Number MPSA56
Manufacturers NXP
Logo NXP
Description PNP general purpose transistor
Datasheet MPSA56 DatasheetMPSA56 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA56 PNP general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA06. 1 handbook, halfpage MPSA56 PINNING PIN 1 2 3 col.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA56 PNP general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA06. 1 handbook, halfpage MPSA56 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. −80 −80 −5 −500 −1 −200 625 +150 150 +150 UNIT V V V mA A mA mW °C °C °C 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBE fT PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −80 V IC = 0; VEB = −5 V IC = −10 mA; VCE = −1 V IC = −100 mA; VCE = −1 V collector-emitter saturation voltage IC = −100 mA; IB = −10 mA base-emitter voltage transition frequency IC = −100 mA; VCE = −1 V IC = −100 mA; VCE = −1 V; f = 100 MHz − − 100 100 − − 50 MIN. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 200 MPSA56 UNIT K/W MAX. −50 −50 − − −250 −1.2 − UNIT nA nA mV V MHz 1999 Apr 27 3 Philips Semiconductors Product specification PNP general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads MPSA56 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 27 4 Philips Semiconductors Product specification PNP general purpose transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values MPSA56 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 27 5 Philips Semiconductors Product specification PNP general purpose transistor NOTES MPSA56 1999 Apr 27 6 Philips Semiconductors Product specification PNP general purpose transistor NOTES MPSA56 1999 Apr 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, .


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