R.0.2P.991602-BEHRE
0809LD30
30 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes gold metallization to ensure high reliability and supreme ruggedness.
CASE OUTLI...
