PD -91598A
IRG4BC20KD-S
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Short Circuit...
PD -91598A
IRG4BC20KD-S
Features
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak package
G E
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
n-ch an nel
Benefits
Latest generation 4 IGBTs offer highest power density motor controls possible. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses. This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. For hints see design tip 97003.
D 2 Pak
Max.
600 16 9.0 32 32 7.0 32 10 ± 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximu...
