IRG4BC20UD-S

PD- 94077 IRG4BC20UD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D2Pak package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A N-channel Benefits Generation 4 IGBTs offers highest efficiencies available Optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 6.5 52 52 7.0 52 ± 20 60 24 -55 to +150 °C 300 (0.063 in. (1.6mm) from c...