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IRGPC40MD2 Dataheets PDF



Part Number IRGPC40MD2
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGPC40MD2 DatasheetIRGPC40MD2 Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 24A E n-channel Description Co-packaged IGBTs are .

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Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency ( 1 to 10kHz) C Short Circuit Rated Fast CoPack IGBT VCES = 600V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 24A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM tsc VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-247AC Max. 600 40 24 80 80 15 80 10 ± 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. — — — — — Typ. — — 0.24 — 6 (0.21) Max. 0.77 1.7 — 40 — Units °C/W g (oz) Revision 2 C-397 To Order Previous Datasheet Index Next Data Sheet IRGPC40MD2 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆T J VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.70 — V/°C VGE = 0V, IC = 1.0mA — 2.0 3.0 IC = 24A V GE = 15V — 2.6 — V IC = 40A — 2.4 — IC = 24A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -12 — mV/°C VCE = VGE, IC = 250µA 9.2 12 — S VCE = 100V, I C = 24A — — 250 µA VGE = 0V, V CE = 600V — — 3500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 15A — 1.2 1.6 IC = 15A, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 59 80 IC = 24A 8.6 10 nC VCC = 400V 25 42 26 — TJ = 25°C 37 — ns IC = 24A, V CC = 480V 240 410 VGE = 15V, R G = 10 Ω 230 420 Energy losses include "tail" and 0.75 — diode reverse recovery. 1.65 — mJ 2.4 3.6 — — µs VCC = 360V, T J = 125°C VGE = 15V, R G = 10 Ω, VCPK < 500V 28 — TJ = 150°C, 37 — ns IC = 24A, V CC = 480V 380 — VGE = 15V, R G = 10 Ω 460 — Energy losses include "tail" and 4.5 — mJ diode reverse recovery. 13 — nH Measured 5mm from package 1500 — VGE = 0V 190 — pF VCC = 30V 20 — ƒ = 1.0MHz 42 60 ns TJ = 25°C 74 120 TJ = 125°C I F = 15A 4.0 6.0 A TJ = 25°C 6.5 10 TJ = 125°C V R = 200V 80 180 nC TJ = 25°C 220 600 TJ = 125°C di/dt = 200A/µs 188 — A/µs TJ = 25°C 160 — TJ = 125°C VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. Refer to Section D for the following: Package Outline 3 - JEDEC Outline TO-247AC C-398 Section D - page D-13 To Order .


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