DatasheetsPDF.com

IRGP440U Dataheets PDF



Part Number IRGP440U
Manufacturers IRF
Logo IRF
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP440U DatasheetIRGP440U Datasheet (PDF)

Previous Datasheet Index Next Data Sheet PD - 9.779A IRGP440U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, wh.

  IRGP440U   IRGP440U


Document
Previous Datasheet Index Next Data Sheet PD - 9.779A IRGP440U INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C UltraFast IGBT VCES = 500V VCE(sat) ≤ 3.0V @VGE = 15V, I C = 22A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 500 40 22 80 80 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. — — — — Typ. — 0.24 — 6 (0.21) Max. 0.77 — 40 — Units °C/W g (oz) Revision 0 C-605 To Order Previous Datasheet Index Next Data Sheet IRGP440U Electrical Characteristics @ T J = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 500 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.35 — V/°C VGE = 0V, I C = 1.0mA — 2.4 3.0 IC = 22A V GE = 15V — 2.8 — V IC = 40A See Fig. 2, 5 — 2.4 — IC = 22A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 6.6 13 — S VCE = 100V, I C = 22A — — 250 µA VGE = 0V, V CE = 500V — — 1000 VGE = 0V, V CE = 500V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ T J = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 55 11 19 27 13 100 56 0.37 0.18 0.55 27 15 137 100 0.96 13 1400 250 42 Max. Units Conditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V — TJ = 25°C — ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10 Ω 100 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 0.70 — TJ = 150°C, — ns IC = 22A, V CC = 400V — VGE = 15V, R G = 10 Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. C-606 To Order Previous Datasheet Index Next Data Sheet IRGP440U 60 F o r b o th : Tria n g u la r w a v e : 50 L O A D C U R R E N T (A ) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 3 5 W 40 S q u are w av e: C la m p v o lta g e : 8 0 % o f ra te d 30 6 0 % o f ra te d v o lta g e 20 10 Id e a l d io d e s 0 0.1 1 10 100 f, F re q u e n c y (k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 100 IC , C o llector-to-E m itte r C urren t (A ) I C , C ollector-to-E mitter C urrent (A ) TJ = 2 5°C TJ = 1 50 °C 100 T J = 15 0°C T J = 2 5°C 10 10 1 1 V G E = 15 V 20 µs P UL S E W ID TH 10 1 5 10 V C C = 1 00 V 5 µs P U L S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-607 To Order Previous Datasheet Index Next Data Sheet IRGP440U 40 V G E = 1.


IRGP440UD2 IRGP440U IRGP430UD2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)