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STPS160H100TV

ST Microelectronics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

® STPS160H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATU...


ST Microelectronics

STPS160H100TV

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Description
® STPS160H100TV HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP AVALANCHERATED LOW INDUCTION PACKAGE INSULATED PACKAGE: Insulating Voltage = 2500 V(RMS) Capacitance = 45 pF DESCRIPTION High voltage dual Schottky rectifier designed for high frequency telecom and computer Switched Mode Power Supplies and other power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 110 °C δ = 0.5 Per diode Per device Value 100 180 80 160 1000 2 10 - 55 to+ 150 150 10000 Unit V A A A A A °C °C V/µs Package d in ISOTOP, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. 2 x 80 A 100 V 150 °C 0.68 V K1 A1 K2 A2 ISOTOPTM tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square * : 1 dPtot < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj July 1999 - Ed: 2A 1/4 STPS160H...




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