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STPS16H100C

ST Microelectronics

High voltage power Schottky rectifier

STPS16H100C High voltage power Schottky rectifier Datasheet - production data A1 A2 K K K A2 A1 D2PAK A2 A1 Featu...


ST Microelectronics

STPS16H100C

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STPS16H100C High voltage power Schottky rectifier Datasheet - production data A1 A2 K K K A2 A1 D2PAK A2 A1 Features  Negligible switching losses  High junction temperature capability  Low leakage current  Good trade off between leakage current and forward voltage drop  Avalanche capability specified  ECOPACK®2 compliant component for D²PAK on demand Description Dual center tap Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC-DC converters. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2x 8 A 100 V 175 °C 0.59 V April 2015 DocID8734 Rev 3 This is information on a product in full production. 1/10 www.st.com Characteristics STPS16H100C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.5, square wave TC = 165 °C TC = 160 °C Per diode Per device Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj= 125 °C Storage temperature range Maximum operating junction temperature (1) 100 V 30 A 8 A 16 200 A 625 W -65 to + 175 °C + 175 °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Rth(c) Table 3: Thermal parameter...




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