MBN400C20

IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). Weight: 350 (g) E E G C TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m MBN400C20 2,000 ±20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 2.8 DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5) (1) (2) Notes: (1)Recommended Value 1.8±0.2/9±1N.m (2)Recommended Value 2.6±0.2N.m CHARACTERISTICS Item (Tc=25°C ) Symbol I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr Unit mA nA V V nF Min. 4.0 - Typ. 4.2 5.1 46 1.4 1.7 1.8 4.0 2.4 0.5 Max. 4.0 ±200 5.2 7.0 100 2.3 2.6 2.4 5.9 3.4 0.9 Test Conditions Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time VCE=2,000V,VGE=0V VGE=±20...