MBN400GR12AW

IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E E G C Weight: 480 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBN400GS12AW 1,200 ±20 400 800 400 800 2,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/2.94(30) 2.94(30) DC 1ms DC 1ms (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 120Arms max. (2)Recommended Value 1.18/2.45N.m(12/25kgf.cm) (3)Recommended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=400A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =400mA Input Capacitance Cies pF 37,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=2.7W (4) 0.75 1.1 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF...