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Provisional Data Sheet No. PD-9.1252B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
®
IRHM2C50SE IRHM7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600Volt, 0.60Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Product Summary
Part Number IRHM2C50SE IRHM7C50SE BV DSS 600V RDS(on) 0.60 Ω ID 10.4A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight 10.4 6.5 41.6 150 1.2 ±20 500 10.4 15 3.0 -55 to 150
Pre-Radiation
IRHM2C50SE, IRHM7C50SE Units A
W W/K
V mJ A mJ V/ns
oC
300 (0.063 in (1.6 mm) from case for 10 sec) 9.3 (typical)
g
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Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min
600 — — — 2.5 3.0 — — — — — — — — — — — — —
Typ Max Units
— 0.45 — — — — — — — — — — — — — — — 8.7 8.7 — — 0.60 0.65 4.5 — 50 250 100 -100 150 30 75 55 190 210 130 — — V V/°C Ω V S( ) µA Ω
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =6.5A VGS = 12V, ID = 10.4A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 6.5A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 10.4A VDS = Max Rating x 0.5 VDD = 300V, ID = 10.4A, RG = 2.35Ω
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Modified MOSFET symbol showing the internal inductances.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — —
2700 300 61
— — —
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
— — — — — — — — — — 10.4 41.6 1.62 1200 16
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
V ns µC
Tj = 25°C, IS = 10.4A, VGS = 0V Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs VDD ≤ 30V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink
Min Typ Max
— — — — 0.83 — 48 0.21 —
Units
K/W
Test Conditions
Typical socket mount
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Radiation Characteristics
Radiation Performa.