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IRHM7C50SE Dataheets PDF



Part Number IRHM7C50SE
Manufacturers IRF
Logo IRF
Description TRANSISTOR N-CHANNEL
Datasheet IRHM7C50SE DatasheetIRHM7C50SE Datasheet (PDF)

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical speci.

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1252B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR ® IRHM2C50SE IRHM7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM2C50SE IRHM7C50SE BV DSS 600V RDS(on) 0.60 Ω ID 10.4A Features: n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ‚ I AR Avalanche Current  EAR Repetitive Avalanche Energy  dv/dt Peak Diode Recovery dv/dt ƒ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight 10.4 6.5 41.6 150 1.2 ±20 500 10.4 15 3.0 -55 to 150 Pre-Radiation IRHM2C50SE, IRHM7C50SE Units A W W/K … V mJ A mJ V/ns oC 300 (0.063 in (1.6 mm) from case for 10 sec) 9.3 (typical) g To Order Previous Datasheet IRHM2C50SE, IRHM7C50SE Devices Index Next Data Sheet Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS ∆BVDSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 600 — — — 2.5 3.0 — — — — — — — — — — — — — Typ Max Units — 0.45 — — — — — — — — — — — — — — — 8.7 8.7 — — 0.60 0.65 4.5 — 50 250 100 -100 150 30 75 55 190 210 130 — — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =6.5A „ VGS = 12V, ID = 10.4A VDS = VGS, ID = 1.0mA VDS > 15V, I DS = 6.5A „ VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 10.4A VDS = Max Rating x 0.5 VDD = 300V, ID = 10.4A, RG = 2.35Ω IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance nA nC ns nH Measured from drain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances. Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2700 300 61 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 10.4 41.6 1.62 1200 16 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. A V ns µC Tj = 25°C, IS = 10.4A, VGS = 0V „ Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs VDD ≤ 30V „ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max — — — — 0.83 — 48 0.21 — Units K/W … Test Conditions Typical socket mount To Order Previous Datasheet IRHM2C50SE, IRHM7C50SE Devices Index Next Data Sheet Radiation Characteristics Radiation Performa.


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