IRFS750A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 Ω (Typ.) IRFS750A BVDSS = 400 V RDS(on) = 0.3 Ω ID = 8.4 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο Ο Ο Value 400 8.4 5.3 1 O Units V A A V mJ A mJ V/ns W W/ C Ο 60 + _ 30 1210 8.4 4.9 4.0 49 0.39 - 55 to +150 O 1 O 1 O 3 O 2 Ο C 300 Thermal Resistance Symbol R θ JC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.55 62.5 Units Ο C/W Rev. B ©1999 Fairchild Semiconductor Corporation IRFS750A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS ∆ BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage ...